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주요공정 장비현황
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CVD ETCH FURNACE ION IMPLANT METAL NANO PHOTO

Model : E1550HT
Maker : 독일 centrotherm
Application
- TEOS Oxide Deposition
- Nitride Deposition
- Poly Silicon/Amorphous Poly Silicon Deposition
- LTO Deposition
Information
- LP31 tube
1) Process : LTO
2) Temperature : 425℃
3) Gas : SiH4, O2
4) Pressure : 160mTorr
5) Loading type : Soft landing
6) Wafer size : 5, 6inch
- LP32 tube
1) Process : Poly Silicon
2) Temperature : 625℃ (Poly Silicon)
530 ℃ (Amorphous Poly Silicon)
3) Gas : SiH4
4) Pressure : 200mTorr
5) Loading type : Soft landing
6) Wafer size : 5, 6inch
- LP33 tube
1) Process : Nitride
2) Temperature : 774℃
3) Gas : DCS, NH3
4) Pressure : 250mTorr
5) Loading type : Soft landing
6) Wafer size : 5, 6inch
- LP34 tube
1) Process : TEOS
2) Temperature : 710℃
3) Gas : TEOS (tetraethylorthosilicate)
4) Pressure : 250mTorr
5) Loading type : Soft landing
6) Wafer size : 5, 6inch
실험실 장비 담당자 : 유성욱 (042-860-6395, ysw@etri.re.kr)

Model : P-5000 MarkⅡ
Maker : AME
Application
- Saline Oxide Deposition
- TEOS Oxide Deposition
- O3 BPSG Deposition
- Nitride Deposition
- Oxynitride Deposition
Information
- Chamber A
1) Process : Saline Oxide
2) Temperature : 400℃
3) Gas : SiH4, N2O
4) Pressure : 3Torr
5) Wafer size : 6inch
- Chamber B
1) Process : TEOS Oxide, O3 BPSG
2) Temperature : 400℃ (TEOS Oxide) 480℃ (O3 BPSG)
3) Gas : TEOS, O2, He (TEOS Oxide) O3/He/TEOS/TEB/TEPO (O3 BPSG)
4) Pressure : 5Torr (TEOS Oxide) 200Torr (O3 BPSG)
5) Wafer size : 6inch
- Chamber C
1) Process : Nitride, Oxynitride
2) Temperature : 400℃
3) Gas : SiH4/N2/NH3 (Nitride) SiH4/N2O/N2 (Oxynitride)
4) Pressure : 4.5Torr (Nitride) 4Torr (Oxynitride)
5) Wafer size : 6inch
실험실 장비 담당자 : 유성욱 (042-860-6395, ysw@etri.re.kr)

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